发明名称 IMPROVED MASKS FOR DOUBLE PATTERNING PHOTOLITHOGRAPHY
摘要 Improved masks for double patterning lithography are described. In one example, conflict spaces between features of a target design are identified. The conflict spaces are represented as nodes of a graph. Connections are inserted between nodes based on a local search. The connections are cut to determine double patterning mask assignment. The connections are extended to form a checkerboard that is then overlayed on the target mask design to split the features of the target mask design for double patterning.
申请公布号 WO2013101090(A1) 申请公布日期 2013.07.04
申请号 WO2011US67894 申请日期 2011.12.29
申请人 INTEL CORPORATION;CASTRO-PAREJA, CARLOS, R.;GU, ALLAN 发明人 CASTRO-PAREJA, CARLOS, R.;GU, ALLAN
分类号 G03F1/76;G03F1/38;G03F1/68 主分类号 G03F1/76
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