Improved interface between a I-III-VI2 material layer and a molybdenum substrate
摘要
The present invention relates to a method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
申请公布号
AU2011351600(A1)
申请公布日期
2013.07.04
申请号
AU20110351600
申请日期
2011.12.20
申请人
NEXCIS
发明人
GRAND, PIERRE-PHILIPPE;JAIME FERRER, JESUS SALVADOR;ROCHE, EMMANUEL;DELIGIANNI, HARIKLIA;VAIDYANATHAN, RAMAN;REUTER, KATHLEEN B.;HUANG, QIANG;ROMANKIW, LUBOMYR;MASON, MAURICE;ZUPANSKI-NIELSEN, DONNA S.