发明名称 Improved interface between a I-III-VI2 material layer and a molybdenum substrate
摘要 The present invention relates to a method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
申请公布号 AU2011351600(A1) 申请公布日期 2013.07.04
申请号 AU20110351600 申请日期 2011.12.20
申请人 NEXCIS 发明人 GRAND, PIERRE-PHILIPPE;JAIME FERRER, JESUS SALVADOR;ROCHE, EMMANUEL;DELIGIANNI, HARIKLIA;VAIDYANATHAN, RAMAN;REUTER, KATHLEEN B.;HUANG, QIANG;ROMANKIW, LUBOMYR;MASON, MAURICE;ZUPANSKI-NIELSEN, DONNA S.
分类号 H01L21/02;H01L21/36 主分类号 H01L21/02
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