发明名称 |
APPARATUS OF CZOCHRALSKI SINGLE CRYSTAL SILICON INGOT |
摘要 |
PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to secure a high quality ingot by restraining the generation of impurities. CONSTITUTION: A crucible is installed in a chamber. A susceptor supports the crucible. An inner crucible (130) is positioned in the crucible. A heater (140) heats the crucible. An insulator (150) prevents the thermal release of the heater.
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申请公布号 |
KR20130073560(A) |
申请公布日期 |
2013.07.03 |
申请号 |
KR20110141470 |
申请日期 |
2011.12.23 |
申请人 |
TECHNOVALUE CO., LTD. |
发明人 |
JOHN CHUN SOO LIM;PARK, YOUN SEOK;CHUNG, YOON SUB;YOON, YEO KYUN;KIM, JIN SUNG |
分类号 |
C30B15/10;C04B35/52;C30B29/06 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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