发明名称 APPARATUS OF CZOCHRALSKI SINGLE CRYSTAL SILICON INGOT
摘要 PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to secure a high quality ingot by restraining the generation of impurities. CONSTITUTION: A crucible is installed in a chamber. A susceptor supports the crucible. An inner crucible (130) is positioned in the crucible. A heater (140) heats the crucible. An insulator (150) prevents the thermal release of the heater.
申请公布号 KR20130073560(A) 申请公布日期 2013.07.03
申请号 KR20110141470 申请日期 2011.12.23
申请人 TECHNOVALUE CO., LTD. 发明人 JOHN CHUN SOO LIM;PARK, YOUN SEOK;CHUNG, YOON SUB;YOON, YEO KYUN;KIM, JIN SUNG
分类号 C30B15/10;C04B35/52;C30B29/06 主分类号 C30B15/10
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