| 摘要 |
A method for programming a programmable block of a power IC device includes selecting an anti-fuse element of the programmable block to be programmed. The anti-fuse element includes first and second capacitive plates separated by a dielectric layer. A voltage pulse is then applied to a pin of the power IC device. The pin is connected to a drain of a high-voltage field-effect transistor (HVFET) that drives an external load via the pin during a normal operating mode of the power IC device. The voltage pulse, which is coupled to the first capacitive plate of the anti-fuse element, has a potential sufficiently high to cause a current to flow through the anti-fuse element that destroys at least a portion of the dielectric layer, thereby electrically shorting the first and second capacitive plates. |
