| 摘要 |
This invention provides a low-resistance oxide transparent electroconductive film having excellent transparency in a visible and near infrared region by a low-temperature process at a temperature of 200°C or below. Further, the use of the oxide transparent elctroconductive film as a transparent electrode in a photoelectric conversion element can realize a high-efficiency solar cell having a high spectral sensitivity in a near infrared region which has been unattainable by the prior art technique or a high-performance photodetection element which can detect a very weak near infrared radiation. The oxide transparent electroconductive film is formed of an oxide electroconductive film containing hydrogen atoms. In this oxide electroconductive film, various conditions of a hydrogen atom content of not less than 1% and not more than 10%, an electron mobility of not less than 40 cm2/Vs as measured by Hall effect measurement, a carrier concentration of not more than 5 OE1020 cm-3, and a specific resistance of not more than 1 OE10-3 Ocm are properly combined. The oxide electroconductive film is grown by solid phase growth using annealing. |
