| 摘要 |
<p>The present invention is a method for manufacturing a bonded wafer comprising bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness. As a result, there is provided a method for manufacturing a bonded wafer by which a bonded wafer with no chipping at the outer circumference portion of the thinned bond wafer, such as an SOI layer, and no delamination can be manufactured for a short time, while the shape of the base wafer is prevented from changing and the diameter of the bond wafer is significantly inhibited from decreasing.</p> |
