发明名称 METHOD OF FORMING METAL LAYER
摘要 PURPOSE: A method for forming a metal layer is provided to improve chemical reaction speed by maximizing the reaction surface of a self-formed catalyst without a mask or a template and to reduce process costs by making maximum chemical reaction with the small amount of the catalyst. CONSTITUTION: A method for forming a metal layer comprises a step for forming a metal layer(220) on a substrate(100), a step for thermally treating the metal layer, and a step for forming a metal layer(230) on the thermally treated metal layer. The metal layer is composed of the transition metals of period 5-6 including ruthenium(Ru), platinum(Pt), rhodium(Rh), iridium(Ir), and osmium(Os).
申请公布号 KR101281841(B1) 申请公布日期 2013.07.03
申请号 KR20110068400 申请日期 2011.07.11
申请人 发明人
分类号 C23C16/448;C23C16/56;C23C28/00 主分类号 C23C16/448
代理机构 代理人
主权项
地址