| 摘要 |
An operation method of a charge trap flash memory device is provided to assure stability of an erase state by preventing opposite charges from being left in a charge trap layer in an erase state. According to an operation method of performing erase operation in a charge trap flash memory device having a charge trap layer, erase operation is performed by applying a composite pulse of a DC pulse and a DC perturbation pulse to the charge trap flash memory device. The composite pulse has the DC perturbation pulse following the DC pulse. The DC perturbation pulse has a DC level with an opposite polarity to the DC pulse. The amplitude of the DC level of the DC perturbation pulse is smaller than the DC pulse. |
