HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE WITH IMPROVED BREAKDOWN VOLTAGE PERFORMANCE

摘要

PURPOSE: A high electron transfer transistor structure having improved break down voltage performance is provided to minimize the bad influence on electrical characteristics by using various dopants. CONSTITUTION: A carrier channel layer is formed in the interface of a gallium nitride layer and a donor supply layer. A gate structure (117), a drain (113), and a source (111) are formed on the donor supply layer. The gate structure is arranged between the drain and the source. A passivation layer is formed on the gate structure and the donor supply layer. The dielectric constant of the passivation layer is lower than that of the donor supply layer.