发明名称 |
THICK-FILM COMPOSITION CONTAINING ANTIMONY OXIDES AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES |
摘要 |
PURPOSE: A thick film composition containing antimony oxide and usage thereof in manufacturing a semiconductor device are provided to manufacture a photo electric cell with excellent efficiency, by providing excellent electrical contact with a semiconductor substrate. CONSTITUTION: A glass frit does not have lead actually. The glass frit has lead oxide whose content is less than 0.5 weight% of the total weight of a glass composition. An electric conductive metal includes silver. An organic medium includes polymer. The organic medium further includes more than one additive from a group comprising a solvent, a stabilizer, a surfactant and a thickening agent.
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申请公布号 |
KR20130073833(A) |
申请公布日期 |
2013.07.03 |
申请号 |
KR20120149765 |
申请日期 |
2012.12.20 |
申请人 |
HERAEUS PRECIOUS METALS GMBH & CO. KG |
发明人 |
HORTEIS MATTHIAS;NEIDERT MICHAEL |
分类号 |
H01L31/042;H01B1/14;H01L31/0224 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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