发明名称 THICK-FILM COMPOSITION CONTAINING ANTIMONY OXIDES AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
摘要 PURPOSE: A thick film composition containing antimony oxide and usage thereof in manufacturing a semiconductor device are provided to manufacture a photo electric cell with excellent efficiency, by providing excellent electrical contact with a semiconductor substrate. CONSTITUTION: A glass frit does not have lead actually. The glass frit has lead oxide whose content is less than 0.5 weight% of the total weight of a glass composition. An electric conductive metal includes silver. An organic medium includes polymer. The organic medium further includes more than one additive from a group comprising a solvent, a stabilizer, a surfactant and a thickening agent.
申请公布号 KR20130073833(A) 申请公布日期 2013.07.03
申请号 KR20120149765 申请日期 2012.12.20
申请人 HERAEUS PRECIOUS METALS GMBH & CO. KG 发明人 HORTEIS MATTHIAS;NEIDERT MICHAEL
分类号 H01L31/042;H01B1/14;H01L31/0224 主分类号 H01L31/042
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