METHOD FOR DEPOSITION OF SILICON CARBIDE

摘要

PURPOSE: A method for depositing silicon carbide is provided to increase the growth rate of a thin film by using a single precursor. CONSTITUTION: A carrier gas is supplied to a reaction gas supply part by using the first supply line (210) of a carrier gas supply part (100). The carrier gas includes hydrogen or inert gas. The reaction gas supply part accommodates liquid (310). The end of the first supply line is dipped in the liquid.