| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve a device property by increasing the process margin between an active area and a storage node contact. CONSTITUTION: The height of an element isolation layer (110) is lower than that of an active region (100). The element isolation layer exposes the upper part of the active region. A barrier pattern (110a) is formed in the sidewall of the active region. The element isolation layer includes a nitride layer. The barrier pattern includes the same material as the element isolation layer.</p> |
