| 摘要 |
<p>A thin film transistor substrate with an adhesive strength between a semiconductor layer and a source electrode, and between a semiconductor layer and a drain electrode; and an LCD device using the thin film transistor substrate. The thin film transistor substrate includes a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer on the gate insulating film, an ohmic contact layer on the active layer, a barrier layer on the ohmic contact layer. The barrier layer is formed of a material layer containing Ge. A source electrode and a drain electrode are on the barrier layer. The source and drain electrodes are provided at a predetermined interval from each other.</p> |
