SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A semiconductor element, a method for manufacturing the semiconductor element, and a semiconductor device using the semiconductor element are provided to reduce the contact resistance between a low resistance region and an electrode by extending the contact area between the oxide semiconductor layer and the electrode. CONSTITUTION: An oxide semiconductor layer includes a channel formation region. A first insulating layer is formed on the oxide semiconductor layer. A gate electrode (108) faces the upper surface of the channel formation region, a first lateral surface, and a second lateral surface. A second insulating layer is formed on the gate electrode. A first electrode and a second electrode are formed on the second insulating layer.