| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce power consumption by using oxide semiconductor in a semiconductor layer. CONSTITUTION: A transistor (111) includes a gate electrode, a source electrode, a drain electrode, an insulating layer, and a semiconductor layer. A first line is electrically connected to the gate electrode. A second line is electrically connected to the source electrode. A pixel electrode (210) is electrically connected to the drain electrode. A groove part (230) passes through the end of the pixel electrode.</p> |
