ORGANIC THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to improve stability by using an upper dielectric layer having hydrophobicity formed in a channel region. CONSTITUTION: A base gate dielectric layer (200) is formed on a gate. A hydrophobic layer (300) is formed between a source and a drain. An organic semiconductor layer (500) is formed in the source and the drain. The organic semiconductor layer is formed on the hydrophobic layer. The hydrophobic layer is made of cytop.