| 摘要 |
876,750. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 7, 1958 [Aug. 7, 1957], No. 25357/58. Drawings to Specification. Class 37. At least part of the surface of a moisture proof semi-conductor substance containing a P-N junction is coated with an additive capable on interaction with the substance in such a way as to absorb water present on the surface and produce a corresponding amount of oxygen which at least partially oxides the semi-conductor substance. A mixture of substances forming a Redox system is applied to the surface the germanium and germanium oxide forming a second Redox system. The chemical reactions are such that at the surface of the semi-conductor the pH2O is considerably diminished and the pO2 is maintained constant. Examples of such Redox systems are p - quinone/hydroquinone, thymoquinone/thymohydroquinone, diphenylamine/diphenylbenzidine, indigo/indole, disulphide/sulphydryl/ and tri-arylmethane and they may be applied to the semi-conductor by sprinkling or alloying with the powdered substance or by coating the semi-conductor with liquid substance or by vaporizing on to the surface of the semiconductor or by applying the system in dissolved form and possibly afterwards vaporizing the solvent or by mixing the systems with or chemically incorporating the systems in a varnish applied to the semi-conductor for mechanical protection. The varnish in the later case may have formaldehyde/phenol resin base or a silicone resin base. The Specification discloses the application of the method to a transistor comprising two indium pellets alloyed to a germanium base. Reference has been directed by the Comptroller to Specification 760,563. |
