| 摘要 |
<p>PURPOSE: A three-dimensional nonvolatile memory device and a manufacturing method thereof are provided to form lamination films with uniform width which are exposed through a staircase structure, by forming the staircase structure in the side of the lamination films which are classified in group unit at the same time. CONSTITUTION: A word line structure (P1) includes a multi layered word line (WL) stacked on a substrate (200). Contact areas (A_C1,A_C2) are arranged between a cell area (A_M) and a peripheral area (A_P) in turn. The contact areas are patterned into a staircase structure as being connected to the word line structure. Each word line is connected to pad films (PL1-PL8) patterned in the staircase structure. The pad films are classified into at least more than 2 contact groups (PL_G1,PL_G2).</p> |
