| 摘要 |
PURPOSE: A method for evaluating precipitation defects of a wafer is provided to perform the detection easily, by using remote plasma etching. CONSTITUTION: Remote plasma etching is performed on the front side of a wafer (S110). A number of fine defect patterns are formed on the surface of the wafer. The fine defect pattern has the predetermined depth. Precipitation defect is analyzed on the surface of the wafer. (S120). Remote plasma etching depth is controlled according to gas type. [Reference numerals] (AA) Start; (BB) End; (S110) Remote plasma etching on the front side of a wafer; (S120) Precipitation defect analysis on the surface of an etched wafer; (S130) Precipitation defect analysis from the surface of an etched wafer to a predetermined section
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