发明名称 |
Method for manufacturing nitride semiconductor crystal layer |
摘要 |
According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickness on a silicon crystal layer. The silicon crystal layer is provided on a base body. The silicon crystal layer has a second thickness before the forming the nitride semiconductor crystal layer. The second thickness is thinner than the first thickness. The forming the nitride semiconductor crystal layer includes making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer to reduce a thickness of the silicon crystal layer from the second thickness.
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申请公布号 |
US8476151(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113037582 |
申请日期 |
2011.03.01 |
申请人 |
SUGIYAMA NAOHARU;SHIODA TOMONARI;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGIYAMA NAOHARU;SHIODA TOMONARI;NUNOUE SHINYA |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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