| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to be able to reduce the time required in a program operation by not performing an all-pass-check operation until the performance number of a program operation reaches the stored program operation number in the actual program operation. CONSTITUTION: A first program loop including a first program operation and a first verification operation is repeated to the memory cells in a first page (710). A first check operation is performed in order to check if the threshold voltages of the memory cells in the first page are higher than a target voltage when the performance number of the first program loop is higher than a first performance number (730). A second check operation is performed in order to find out the number of memory cells having lower threshold voltages than the target voltage in case that the first check operation result shows that memory cells having lower threshold voltages than the target voltage exist (760). [Reference numerals] (712) Program pulse is authorized; (714) Verification pulse is authorized; (720) First program pulse?; (730) First check operation is performed; (740) Pass?; (750) Secon program pulse?; (760) Second check operation is performed; (770) Error bit number <= N?; (780) Last program pulse?; (782) Verification pulse is increased; (790) Fail treatment; (AA) Start; (BB,EE,FF,II,JJ) No; (CC,DD,GG,HH,KK) Yes; (LL) End
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