发明名称 Method of fabricating a semiconductor device and structure
摘要 A method to fabricate a semiconductor device, including the sequence of: implanting one or more regions on a semiconductor wafer forming a doped layer; performing a first transfer of the doped layer onto a carrier; and then performing a second transfer of the doped layer from the carrier to a target wafer; and then etching said one or more regions of the doped layer to form transistors on the doped layer.
申请公布号 US8476145(B2) 申请公布日期 2013.07.02
申请号 US20100904119 申请日期 2010.10.13
申请人 OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C.;MONOLITHIC 3D INC. 发明人 OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C.
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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