发明名称 |
Method of fabricating a semiconductor device and structure |
摘要 |
A method to fabricate a semiconductor device, including the sequence of: implanting one or more regions on a semiconductor wafer forming a doped layer; performing a first transfer of the doped layer onto a carrier; and then performing a second transfer of the doped layer from the carrier to a target wafer; and then etching said one or more regions of the doped layer to form transistors on the doped layer.
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申请公布号 |
US8476145(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US20100904119 |
申请日期 |
2010.10.13 |
申请人 |
OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C.;MONOLITHIC 3D INC. |
发明人 |
OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C. |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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