发明名称 |
C-rich carbon boron nitride dielectric films for use in electronic devices |
摘要 |
A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
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申请公布号 |
US8476743(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113228857 |
申请日期 |
2011.09.09 |
申请人 |
NGUYEN SON VAN;GRILL ALFRED;HAIGH, JR. THOMAS J.;MEHTA SANJAY;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NGUYEN SON VAN;GRILL ALFRED;HAIGH, JR. THOMAS J.;MEHTA SANJAY |
分类号 |
H01L23/58;B05D5/12;C23C8/54;H01L21/31 |
主分类号 |
H01L23/58 |
代理机构 |
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