| 摘要 |
Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S-of collective area (St cm2) of inversion domains in, to total area (S cm2) of the principal face of, the GaN substrate-of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 mum2 or more being D cm-2; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product Sc×D of the area Sc of the device principal faces, and the density D of the inversion domains is made less than 2.3.
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