发明名称 Low leakage diodes
摘要 A diode includes an anode of a first conductivity type; a first cathode of the first conductivity type; and a second cathode of a second conductivity type opposite the first conductivity type. A lightly-doped region of the first conductivity type is under and vertically overlaps the anode and the first and the second cathodes. The portion of the lightly-doped region directly under the second cathode is fully depleted at a state when no bias voltage is applied between the anode and the second cathode.
申请公布号 US8476736(B2) 申请公布日期 2013.07.02
申请号 US201113030771 申请日期 2011.02.18
申请人 LEE JAM-WEM;CHANG YI-FENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE JAM-WEM;CHANG YI-FENG
分类号 H01L29/861 主分类号 H01L29/861
代理机构 代理人
主权项
地址