发明名称 |
Semiconductor element and manufacturing method therefor |
摘要 |
A semiconductor device 100 includes: a body region 105 of a first conductivity type placed on a principal surface of a substrate 101; a silicon carbide layer 102 including a drift region 107 of a second conductivity type; a channel layer 115 of the second conductivity type formed by silicon carbide and placed on the body region 105 and the drift region 107 on a surface of the silicon carbide layer 102; a gate insulating film 111 placed on the channel layer 115; a gate electrode 113 insulated from the silicon carbide layer 102 by the gate insulating film 111; a source electrode 116 provided on the silicon carbide layer 102; and a drain electrode 114 provided on a reverse surface of the substrate 101, wherein the source electrode 116 is in contact with the body region 105 and the channel layer 115; and a second conductivity type impurity concentration on a surface of the silicon carbide layer 102 that is in contact with the source electrode 116 is less than or equal to a second conductivity type impurity concentration of the channel layer 115. Thus, it is possible to provide a silicon carbide semiconductor device having a low loss and a desirable switching characteristic.
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申请公布号 |
US8476733(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201013142659 |
申请日期 |
2010.11.15 |
申请人 |
TAKAHASHI KUNIMASA;KUDOU CHIAKI;PANASONIC CORPORATION |
发明人 |
TAKAHASHI KUNIMASA;KUDOU CHIAKI |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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