发明名称 |
Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle |
摘要 |
A semiconductor structure having a high Hall mobility is provided that includes a SiC substrate having a miscut angle of 0.1° or less and a graphene layer located on an upper surface of the SiC substrate. Also, provided are semiconductor devices that include a SiC substrate having a miscut angle of 0.1° or less and at least one graphene-containing semiconductor device located atop the SiC substrate. The at least one graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the SiC substrate.
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申请公布号 |
US8476617(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113030834 |
申请日期 |
2011.02.18 |
申请人 |
DIMITRAKOPOULOS CHRISTOS D.;GRILL ALFRED;MCARDLE TIMOTHY J.;OTT JOHN A.;WISNIERFF ROBERT L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIMITRAKOPOULOS CHRISTOS D.;GRILL ALFRED;MCARDLE TIMOTHY J.;OTT JOHN A.;WISNIERFF ROBERT L. |
分类号 |
H01L29/08;H01L21/20 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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地址 |
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