发明名称 |
High-performance diode device structure and materials used for the same |
摘要 |
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
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申请公布号 |
US8476140(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201213352833 |
申请日期 |
2012.01.18 |
申请人 |
SANDHU GURTEJ;SRINIVASAN BHASKAR;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ;SRINIVASAN BHASKAR |
分类号 |
H01L21/8222;H01L21/20 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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