发明名称 High-performance diode device structure and materials used for the same
摘要 A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
申请公布号 US8476140(B2) 申请公布日期 2013.07.02
申请号 US201213352833 申请日期 2012.01.18
申请人 SANDHU GURTEJ;SRINIVASAN BHASKAR;MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ;SRINIVASAN BHASKAR
分类号 H01L21/8222;H01L21/20 主分类号 H01L21/8222
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