| 摘要 |
PURPOSE: A non-volatile memory device, and an erasing method thereof are provided to set the test voltage of soft program operation depending on the memory cell group, thereby improving a disturb phenomenon. CONSTITUTION: A memory cell block comprises even memory cells and odd memory cells. A page buffer (120) is connected to an even bit line and an odd bit line, and soft program-tests the even memory cells and odd memory cells. A voltage supply unit (130) selectively applies test voltages to multiple word lines which are connected with the even memory cells and odd memory cells mutually. A controlling unit (140) controls the page buffer and the voltage supply unit to successively progress the soft program operation of even memory cells and odd memory cells. [Reference numerals] (110) Memory cell array; (120) Page buffer unit; (130) Voltage supply unit; (140) Controlling unit; (AA) BL (BLe and BLo) |
