发明名称 |
Methods of forming layers on substrates |
摘要 |
Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.
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申请公布号 |
US8476162(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113269243 |
申请日期 |
2011.10.07 |
申请人 |
HA TAE HONG;LAM WINSOR;GUNG TZA-JING;LEE JOUNG JOO;APPLIED MATERIALS, INC. |
发明人 |
HA TAE HONG;LAM WINSOR;GUNG TZA-JING;LEE JOUNG JOO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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