发明名称 |
Preferential dielectric gapfill |
摘要 |
Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.
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申请公布号 |
US8476142(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113052238 |
申请日期 |
2011.03.21 |
申请人 |
KWESKIN SASHA;HAMANA HIROSHI;GEE PAUL EDWARD;VENKATARAMAN SHANKAR;SAPRE KADAR;APPLIED MATERIALS, INC. |
发明人 |
KWESKIN SASHA;HAMANA HIROSHI;GEE PAUL EDWARD;VENKATARAMAN SHANKAR;SAPRE KADAR |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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