PLASMA ETCHING APPARATUS

摘要

PURPOSE: A plasma etching apparatus is provided to reduce plasma loss by using inductive coupled plasma (ICP). CONSTITUTION: An antenna coil (20) is formed in a process chamber (10). The antenna coil generates a magnetic field. A magnetic field shielding member (70) blocks the magnetic field. The magnetic field shielding member controls the separation distance of the antenna coil. A fixing pin holds the magnetic field shielding member.