Protective cap for extreme ultraviolet lithography masks

摘要

An extreme ultraviolet (EUV) lithography mask is provided. The EUV lithography mask includes a reflective layer and an absorptive layer deposited over the reflective layer. The absorptive layer is patterned so as to define absorptive regions of the mask for absorbing EUV radiation and reflective regions of the mask for reflecting EUV radiation. The EUV lithography mask further includes a protective capping layer which is deposited over both the absorptive regions and the reflective regions of the mask.