METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL

摘要

PURPOSE: A method and an apparatus for producing a single crystal are provided to reduce the load of a single crystal and the curvature of a crystallization boundary due to a thermal stress. CONSTITUTION: A single crystal (1) is grown between a crystallization boundary (2) and a melting zone of a molten material (3). An RF inductor (4) heats the melting zone. The crystallization heat generated in a single crystal growth process is emitted through the lateral surface (5) of the single crystal. A heater (6) directly heats the single crystal. The heater is arranged on a reflector (8).