发明名称 |
INTERPOSER HAVING PASSIVE EQUALIZER USING THROUGH SILICON VIA, MANUFACTURING METHOD THEREOF, STACKED CHIP PACKAGE INCLUDING THE INTERPOSER, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PURPOSE: An interposer including a passive equalizer using a through silicon via, a manufacturing method thereof, a stacked chip package including the same, and a method for manufacturing the stacked chip package are provided to improve signal transmission properties without increasing a size or manufacturing costs. CONSTITUTION: A first insulation layer (120) is formed on the front side of a semiconductor substrate (110). A second insulation layer (130) is formed on the rear side of the semiconductor substrate. A plurality of through silicon vias (144,146,148) pass through the semiconductor substrate, the first insulation layer, and the second insulation layer. A plurality of metal wires include a signal transmission line (150a) to transmit an electric signal and a plurality of ground lines (150b-150f) to transmit a ground voltage. A rear metal pattern (170) includes a junction pattern (172) and a plurality of finger patterns (174,176,178). [Reference numerals] (AA) Second direction; (BB) First direction</p> |
申请公布号 |
KR101278442(B1) |
申请公布日期 |
2013.07.01 |
申请号 |
KR20120006088 |
申请日期 |
2012.01.19 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIM, JOUNG HO;LEE, MAN HO;KIM, HEE GON |
分类号 |
H01L23/12;H01L23/48 |
主分类号 |
H01L23/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|