发明名称 INTERPOSER HAVING PASSIVE EQUALIZER USING THROUGH SILICON VIA, MANUFACTURING METHOD THEREOF, STACKED CHIP PACKAGE INCLUDING THE INTERPOSER, AND MANUFACTURING METHOD THEREOF
摘要 <p>PURPOSE: An interposer including a passive equalizer using a through silicon via, a manufacturing method thereof, a stacked chip package including the same, and a method for manufacturing the stacked chip package are provided to improve signal transmission properties without increasing a size or manufacturing costs. CONSTITUTION: A first insulation layer (120) is formed on the front side of a semiconductor substrate (110). A second insulation layer (130) is formed on the rear side of the semiconductor substrate. A plurality of through silicon vias (144,146,148) pass through the semiconductor substrate, the first insulation layer, and the second insulation layer. A plurality of metal wires include a signal transmission line (150a) to transmit an electric signal and a plurality of ground lines (150b-150f) to transmit a ground voltage. A rear metal pattern (170) includes a junction pattern (172) and a plurality of finger patterns (174,176,178). [Reference numerals] (AA) Second direction; (BB) First direction</p>
申请公布号 KR101278442(B1) 申请公布日期 2013.07.01
申请号 KR20120006088 申请日期 2012.01.19
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM, JOUNG HO;LEE, MAN HO;KIM, HEE GON
分类号 H01L23/12;H01L23/48 主分类号 H01L23/12
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