| 摘要 |
The present invention provides a semiconductor device including a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which has a layer (13a) including an organic compound as a dielectric, by applying a voltage to a pair of electrodes, the state change caused by the precipitous change in volume (such as bubble generation) is generated between the pair of electrodes (11a,14). Short-circuiting between a pair of electrodes is promoted by acting force based on this state change. Concretely, a bubble generating area is provided in the memory element to generate a bubble (16) between the first conductive layer and the second conductive layer. |
