SILICON CARBIDE POWDER AND PREPARING METHOD OF SILICON CARBIDE POWDER

摘要

PURPOSE: A silicon carbide powder for the single crystal growth and a manufacturing method thereof are provided to easily control the sublimation behavior of the silicon carbide powder, and to grow a high quality single crystal. CONSTITUTION: The manufacturing method of silicon carbide powder (10) comprises: a step of preparing a starting material including silicon carbide; a step of rising temperature of the starting material at the heating rate of 5°C/min or more; and a step of heating the starting material at 1900°C or more. The particle size of the starting material is 0.1-5 um. The aspect ratio of the silicon carbide powder is 0.5 or less.