发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor device is provided to minimize power consumption in a test operation mode by activating only a test reference voltage generation unit in the test operation mode. CONSTITUTION: A normal reference voltage generation unit (110) has a plurality of unit distribution resistors having respective scheduled resistance value and generates normal reference voltage corresponding to the plurality of unit distribution resistance in a normal operation mode. A test reference voltage generation unit (120) has a plurality of test distribution resistors having resistance value greater than the plurality of unit distribution resistors and generates test reference voltage corresponding to the plurality of test distribution resistors in a test operation mode. A mode operation unit performs operation corresponding to a corresponding mode by receiving corresponding reference voltage in the normal operation mode and test operation mode. [Reference numerals] (110) Normal reference voltage generation unit; (120) Test reference voltage generation unit; (130) Input buffering unit
申请公布号 KR20130071983(A) 申请公布日期 2013.07.01
申请号 KR20110139505 申请日期 2011.12.21
申请人 SK HYNIX INC. 发明人 LEE, JEONG HUN;KIM, YONG MI
分类号 G11C29/00;G11C5/14 主分类号 G11C29/00
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