发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor device is provided to minimize power consumption in a test operation mode by activating only a test reference voltage generation unit in the test operation mode. CONSTITUTION: A normal reference voltage generation unit (110) has a plurality of unit distribution resistors having respective scheduled resistance value and generates normal reference voltage corresponding to the plurality of unit distribution resistance in a normal operation mode. A test reference voltage generation unit (120) has a plurality of test distribution resistors having resistance value greater than the plurality of unit distribution resistors and generates test reference voltage corresponding to the plurality of test distribution resistors in a test operation mode. A mode operation unit performs operation corresponding to a corresponding mode by receiving corresponding reference voltage in the normal operation mode and test operation mode. [Reference numerals] (110) Normal reference voltage generation unit; (120) Test reference voltage generation unit; (130) Input buffering unit |
申请公布号 |
KR20130071983(A) |
申请公布日期 |
2013.07.01 |
申请号 |
KR20110139505 |
申请日期 |
2011.12.21 |
申请人 |
SK HYNIX INC. |
发明人 |
LEE, JEONG HUN;KIM, YONG MI |
分类号 |
G11C29/00;G11C5/14 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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