| 摘要 |
PURPOSE: An epitaxial wafer and a method for forming a pattern are provided to extend the surface area of an epi layer by forming irregular patterns for increasing the amount of light, thereby improving light efficiency. CONSTITUTION: A substrate (10) including silicon carbide is prepared. An epi layer (20) is formed on the substrate. A coating layer (30) including metal is formed on the epi layer. The coating layer is heat-treated. The epi layer is etched.
|
