VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING FOR THE SAME

摘要

PURPOSE: A vertical light emitting diode and a manufacturing method thereof are provided to prevent the discharge of leakage current and interference between diode layers by forming a passivation layer on the sidewall of the vertical light emitting diode. CONSTITUTION: A conductive support layer (110) is formed on a p-type electrode (120). A p-type semiconductor layer (130) is formed on the p-type electrode. An active layer (140) is formed on the p-type semiconductor layer. An n-type semiconductor layer (150) is formed on the active layer. A passivation layer (160) is formed between the conductive support layer and the p-type electrode.