| 摘要 |
A manufacturing method and an etchant composites used to a method of a thin film transistor for forming a taper profile with a superior linearity are provided to solve a problem such as the fault of the short or the wiring. A thin film transistor comprises a semiconductor layer(110), a gate insulating layer(115), a gate electrode(120), an inter-layer insulating film(125) and a source/drain electrode. The gate electrode and source/drain electrode comprise the copper layer. The gate electrode and source/drain electrode comprise the second additive 0.2~4 weight% and the water remaining amount including the first additive 0.2~4 weight%, and the nitrogen atom including the inorganic salt oxidizer 1~20 weight%. |
