THREE-DIMENSIONAL STACKED INTEGRATED CIRCUIT

摘要

PURPOSE: A three-dimensional stacked integrated circuit is provided to prevent damage of a package, by forming a plurality of penetration silicon vias at each edge of a plurality of semiconductor chips. CONSTITUTION: A plurality of semiconductor chips (110) is stacked on a base substrate (100). The semiconductor chips are conducted through a plurality of penetration silicon vias (210, 220). The penetration silicon vias are formed at each edge of the semiconductor chips. The penetration silicon vias are electrically connected to a conductive pattern. The conductive pattern is formed on the upper surface of the base substrate.