发明名称 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION
摘要 PURPOSE: A method and a system for setting a pinned layer in a magnetic tunneling junction are provided to improve spin transfer torque efficiency by setting the pinned layers of the magnetic junction in a desired state. CONSTITUTION: A first non-magnetic spacer layer(120) is located between a first pinned layer(110) and a free layer(130). A second pinned layer(150) includes a plurality of ferromagnetic layers interleaved with the space layer. The plurality of ferromagnetic layers have one easy magnetization axis. A magnetic field is applied to one of the easy magnetization axes in parallel to the easy magnetization axis. The magnetic field has a magnitude greater than a coercivity of each of the plurality of ferromagnetic layers and less than a coupling field between the plurality of ferromagnetic layers. [Reference numerals] (110) First pinned layer; (120) First non-magnetic spacer layer; (130) Free layer; (140) Second non-magnetic spacer layer; (152) Reference layer; (154) Non-magnetic layer; (156) Pinned layer
申请公布号 KR20130071405(A) 申请公布日期 2013.06.28
申请号 KR20120149654 申请日期 2012.12.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 APALKOV DMYTRO;KHVALKOVSKIY ALEXEY VASILYEVITCH;NIKITIN VLADIMIR;KROUNBI MOHAMAD TOWFIK;TANG XUETI;OH, SE CHUNG;LIM, WOO CHANG;LEE, JANG EUN;KIM, KI WOONG;KIM, KYOUNG SUN
分类号 G11C11/15;H01L21/8247;H01L27/115 主分类号 G11C11/15
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