| 摘要 |
<p>PURPOSE: A variable resistance memory device and a forming method thereof form a selecting transistor able to receive thermal budget and the form word lines, maintaining the property of a variable resistance memory cell. CONSTITUTION: Word lines (WLa1,WLb1,WLa2,WLb2) are extended to a first direction. A variable resistance film (54) is interposed between the word line and a vertical electrode. A selecting transistor comprises a gate electrode, a first impurity implantation region, and a second impurity implantation region. A bit line (BL) is electrically connected to the second impurity implantation region. The bit line is extended to a second direction intersecting the first direction.</p> |
