| 摘要 |
<p>PURPOSE: A non-volatile memory device and manufacturing method thereof makes the height of the upper part of a floating gate lower than the height of the upper part of an element isolation layer, reducing interference with adjacent floating gates. CONSTITUTION: A floating gate is formed on an active area of a semiconductor substrate. An element isolation layer (212) is formed in an element isolation region of the semiconductor substrate. The element isolation layer has a protrusion part. The protrusion part is protruded higher than the upper surface of the floating gate. A dielectric film (214) is formed along the upper surface of the floating gate.</p> |
