| 摘要 |
<p>The invention relates to an installation and a process for the synthesis in microwave field of the multinary chalcogenide semiconductors of the type (Ag, In)ZnS, with x ranging between 0 and 1. According to the invention, the installation comprises a modified commercial microwave oven, or a wave guide (), a microwave generator () controlled by means of a control unit (), a microwave antenna consisting of a metal disk () and a metal bar () which is in close contact with the disk (), whereon there is placed an alumina or quartz crucible () which is located inside a tube () made of quartz or other dielectric material resistant to high temperature, provided with a plug () with hose wherethrough there may be introduced an inert gas, and a dedicated installation () wherein there may be produced vacuum, in the case when there occurs a sealing between the quartz tube () and the metal bar (), by using a vacuum line () which may be accessed by using a three-way valve (). As claimed by the invention, the process consists in using a closely homogenized mixture of powdered metal and sulphur, bulk or as tablets, which reacts spontaneously in an inert gas environment, after the reaction initiation by means of the plasma, and which, then, absorbs a microwave radiation while keeping the mixture reactive at a temperature of over 1000°C, fact that produces an intense process of ion diffusion, there resulting a compositionally homogenous reaction product.</p> |
