发明名称 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION
摘要 PURPOSE: A chemical-mechanical abrasion slurry composition is provided to remarkably reduce abrasion rate of an interlayer insulating film, thereby conduct a planarization of an insulating film with a stepped region. CONSTITUTION: A chemical-mechanical abrasion slurry composition comprises an abrasive particle, a pH modifier, a pH buffer agent, water, and an ionic liquid represented by chemical formula 1. In chemical formula 1, each of R1 and R2 is C1-10 alkyl group; X^- is a monovalent anion. The abrasive particle is selected from colloidal silica, fumed silica, alumina, ceria, titania, zirconia, and a mixture thereof. The pH modifier is selected from phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid, ammonia, potassium hydroxide, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, and a mixture thereof.
申请公布号 KR20130071089(A) 申请公布日期 2013.06.28
申请号 KR20110138411 申请日期 2011.12.20
申请人 DONGJIN SEMICHEM CO., LTD. 发明人 KIM, JONG WON;PARK, HYE JUNG;SHIN, JONG CHUL;PARK, JONG DAI
分类号 C09K3/14;C07D233/12;H01L21/304;H01L21/306 主分类号 C09K3/14
代理机构 代理人
主权项
地址