发明名称 PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method in which a space between fine periodic patterns and a comparatively large-sized pattern disposed at the end thereof is narrowed down to approximately a space inside the fine periodic patterns. <P>SOLUTION: In a pattern forming method, an inversion layer 34 is formed on a core material film 31 having a pattern of a mask film 32 in which periodic patterns 32a and a non-periodic pattern 32b are mixed, and the inversion layer 34 is removed until a top surface of the mask film 32 is exposed. By using periodic patterns 34a and a non-periodic pattern 34b obtained by selectively removing the mask film 32 as masks, the core material film 31 is etched, thus a reverse pattern having periodic patterns and a non-periodic pattern is formed. A side wall film is formed around the reverse pattern, and the periodic patterns are removed, thereby a side wall pattern is formed. A workpiece 14 is processed by using the side wall pattern and the non-periodic pattern surrounded by the side wall film as masks. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013128059(A) 申请公布日期 2013.06.27
申请号 JP20110277247 申请日期 2011.12.19
申请人 TOSHIBA CORP 发明人 YANAI YOSHIHIRO;MATSUNO KOICHI;MITSUYOSHI YASURO
分类号 H01L21/8247;H01L21/28;H01L21/3065;H01L21/3213;H01L21/336;H01L21/768;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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