发明名称 |
Selective Bias Compensation for Patterning Steps in CMOS Processes |
摘要 |
A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.
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申请公布号 |
US2013164938(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113335618 |
申请日期 |
2011.12.22 |
申请人 |
SHIEH MING-FENG;CHANG CHING-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHIEH MING-FENG;CHANG CHING-YU |
分类号 |
H01L21/311;G03F7/20 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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