METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GALLIUM NITRIDE MATERIALS USING CONDUCTIVITY MODULATION
摘要
<p>A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.</p>
申请公布号
WO2013096054(A1)
申请公布日期
2013.06.27
申请号
WO2012US69251
申请日期
2012.12.12
申请人
AVOGY, INC.;NIE, HUI;EDWARDS, ANDREW, P.;DISNEY, DONALD, R.;BROWN, RICHARD, J.;KIZILYALLI, ISIK, C.
发明人
NIE, HUI;EDWARDS, ANDREW, P.;DISNEY, DONALD, R.;BROWN, RICHARD, J.;KIZILYALLI, ISIK, C.